Switch block for FPGA architectures

ABSTRACT

A switch block for FPGA architectures combining hardware and software techniques in order to reduce both active and standby leakage power.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a switch block for FPGA architectures.

2. Description of the Related Art

As it is well known, technology scaling is leading to an exponentialincrease in integrated circuit leakage current, such that below 90 nmstatic power could be the dominant factor in energy consumption.

In particular, configurable structures such as FPGA (Field-ProgrammableGate Arrays) architectures are affected more heavily than other devicessuch as ASICs by this problem, since they require many more transistorsto support their main feature, the reconfigurability.

Indeed, configurable logic structures have become a valid alternative toASICs because of the provided software programmability which reduces thedesign cycle, while density and running frequency greatly increase. Itis well known that this flexibility is achieved at the cost of a largersilicon area occupation to accommodate the logic blocks that realizereconfigurability.

However, as technology scales the area constraint is becoming lessrestrictive, while the large number of integrated transistors in FPGAarchitectures is still a source of higher energy consumption of sucharchitectures than the ASIC ones.

Since reconfigurable computing is a promising technology for wirelessapplications where systems need to support a variety of changingcommunication protocols, the power consumption constraint is becomingthe main issue that could prevent FPGA architectures from being widelyused in this field.

A typical configuration of a FPGA architecture is schematically shown inFIG. 1 and globally indicated with 1. The FPGA architecture 1essentially comprises a plurality of programmable logic elements 2arranged in a matrix-like configuration, commonly indicated as gatearrays, each of such programmable logic elements 2 being connected, bymeans of a plurality of local connections 3, to an interconnectionnetwork 4, in turn comprising a plurality of horizontal interconnectionlines 4 a and vertical interconnection lines 4 b.

As schematized in the figure, each programmable logic element 2 of thegate array essentially comprises one or more computational blocks 5 suchas look-up tables, ALUs etc, having a plurality of inputs and beingconnected to an output through a multiplexer 6 having in turn an inputconnected to a memory element 7.

In particular, the interconnection network 4 allows to reconfigure theFPGA architecture 1, changing the operation thereof.

FIG. 2 schematically shows a FPGA architecture 1, depicted inisland-style, and comprising a switch matrix 9 of switch blocks forconnecting a plurality of connection lines.

In particular, the figure shown how the programmable logic element 2 isconnected to a horizontal connection block 8 a and to a verticalconnection block 8 b in turn connected to the switch matrix 9, in turncomprising a plurality of switch blocks 10.

When power consumption of a FPGA architecture 1 is considered, it isimmediately evident that a large part of the device area is often leftcompletely unused when a specific circuit is mapped, and its powerconsumption is useless.

Several studies have been conducted on dynamic power reduction for FPGAarchitectures. In particular, the problem of leakage consumptionevaluating different Hw/Sw techniques has been described by Anderson etal in the article entitled: “Active leakage Power Optimization forFPGA”, FPGA2004, Feb. 22-24, 2004 as well as by Rahman et al. in thearticle entitled: “Evaluation of Low-Leakage Design Techniques forField-Programmable Gate Arrays”, FPGA2004, Feb. 22-24, 2004.

As a matter of fact, the fraction of power consumption due to leakagecurrent in FPGA architectures is rapidly increasing as technologyadvances. This is mainly due to the threshold voltage scaling whichleads to an exponential increase in the subthreshold leakage.

Since leakage generates static power consumption which depends on thenumber of integrated transistors, FPGA architectures will be sufferingfrom this problem even more than other devices.

As already pointed out, most of the transistors provided for flexibilitypurposes in a FPGA are left unused when implementing a circuit. Theseparts of the configurable device do not present dynamic powerconsumption but contribute to increased energy dissipation, having astatic subthreshold current.

Since the percentage of total power dissipation due to leakage dependson the number of unused resources, in FPGA architectures the leakagepower consumption can become relevant and energy efficiency can bedeeply affected.

A common way to tackle this problem is to use high thresholdtransistors, since leakage depends exponentially on the thresholdvoltage. In fact the leakage current of a high threshold transistor isabout two orders of magnitude lower than a low threshold transistorbeing equivalent in terms of area and working conditions. However thistechnique significantly affects delays and could be used only fornon-timing critical circuits.

When adopting the above described dual threshold approach to the designof a circuit, as described for example by Wei et al. in the articleentitled: “Design and Optimization of Low Voltage High Performance DualThreshold”, DAC1998, 1998, an analysis of the criticality of the blockscomposing the circuit needs to be carried out. In particular in the caseof a FPGA architecture, it can be noticed that configuration memoryelements, usually RAM cells, are not directly involved with signaltransmission delay. Therefore all such static RAM cells can beimplemented using slow high threshold transistors in order to saveenergy.

On the other hand switch blocks, connect blocks, logic blocks andlookup-tables (LUTs) contribute to delays in signal propagation.Therefore these blocks should be carefully studied in order to usehigh-speed low threshold (Vtl) transistors on the critical delay paths,and high threshold transistors (Vth) for the other components.

This technique has been extensively applied in the design of a PiCoGAconfigurable device, as described by Lodi et al. in the articleentitled: “A Pipelined Configurable Gate Array for Embedded Processors”,Proceedings of the 11th ACM/SIGDA International Symposium on FPGAs,February 2003. Such a PiCoGA configurable device has been implemented onsilicon in 0.13 μm STMicroelectronics technology.

Though the above described dual threshold approach has been adopted, ithas been verified that yet considerable power dissipation due to leakageremains, which has been measured to be more than 25 mW for a PiCoGAconfigurable device area occupation of 11 mm². This is a staticconsumption and scaling to technology below 100 nm will considerablyincrease it.

Transistors inside the logic block, LUTs and input connect blocks havesmaller size since they drive only short local wires. On the other hand,switch blocks and output connect blocks drive routing wires crossingover several tiles, therefore the parasitic capacitive load involved isconsiderable. Since signal propagation through programmableinterconnections is responsible for most delays in FPGA architectures,large buffers inside switch blocks are necessary to avoid a significantdegradation of timing performance.

A switch block 10 realized according to the known designs is shown inFIG. 3. In particular, this figure shown a circuit schematiccorresponding to a traditional implementation of a tri-state bufferedswitch optimized for delays, also indicated as Switch0.

The switch block 10 realizes the connection between a first line L0, asecond line L1, a third line L2 and a fourth line L3, as shown in FIG.4.

To do this, the switch block 10 comprises:

a first pass-transistor N0 connected between the first line L0 and afirst internal node net0;

a second pass-transistor N1 connected between the second line L1 and thefirst internal node net0;

a third pass-transistor N2 connected between the third line L2 and thefirst internal node net0; and

a fourth pass-transistor N6 connected between the fourth line L3 and asecond internal node net2.

In the example shown in the FIG. 4, the pass-transistors N0-N2 and N6are of the NMOS type.

The switch block 10 also includes a first inverter P1-N4 and a secondinverter P2-N5, inserted between the first and second internal nodes,net0 and net2, and interconnected at a third internal node net1.

In particular, the first inverter comprises a PMOS transistor P1 and anNMOS transistor N4 connected, in series to each other, between a firstand a second voltage reference, in particular a supply voltage referenceVDD and ground GND. The first inverter transistors P1 and N4 have theirgate terminals connected to each other and to the first internal nodenet0 and the common drain terminals connected to the third internal nodenet1.

In a same manner, the second inverter has a PMOS transistor P2 and anNMOS transistor N5 connected, in series to each other, between thesupply voltage reference VDD and ground GND, the second invertertransistors P2 and N5 having their gate terminals connected to eachother and to the third internal node net1 and the common drain terminalsconnected to the second internal node net2.

Finally, the switch block 10 includes a pull down transistor N3 insertedbetween the first internal node net0 and ground GND and a pull uptransistor P0 inserted between the supply voltage reference VDD and thefirst internal node net0, the pull up transistor P0 having its gateterminal connected to the third internal node net1.

In particular, the pull down transistor N3 is of the NMOS type and thepull up transistor P0 is of the PMOS type, both being high-voltage orVth transistors (as indicated by a thicker gate line in the figure), allother transistors being low-voltage or Vtl transistors.

According to this design, only Vtl transistors are in the signal path ofthe switch block 10 in order to minimize delays.

In order to analyze the leakage current of inactive circuit elements,the switch block 10 has to be turned off. All the pass-transistors areturned off and the pull down transistor N3 is turned on, so that thefirst and second internal nodes net0 and net2 are pulled down. Inparticular, the pull down transistor N3 is driven by a driving signal,which corresponds to the inverted driving signal of the fourthpass-transistor N6.

The leakage current associated with the switch block 10 is composed of afixed contribution due to subthreshold current from the transistors P1to the transistor N4 of the first inverter and from the transistor P2 tothe transistor N5 of the second inverter, and of a variablecontribution. This variable contribution is due to the leakage currentpassing through the pass-transistors N0, N1, N2 and N6, and depends onthe difference of voltage levels between source and drain of thepass-transistors themselves and thus on the external signals applied tothe lines L0-L3.

There are five possible configurations for the external signals appliedto the lines L0 . . . L3, each of them assuming a value 0 or a valueequal to VDD−Vtl, being VDD the power voltage reference value and Vtlthe threshold voltage value of a low-voltage transistor.

It can be seen that the leakage power consumption of the switch block 10is highest when all the external lines assume a high value (differenceat the terminals of pass-transistors equal to VDD−Vtl), and it is lowestin the opposite condition (no difference at the terminals ofpass-transistors implies no leakage current).

A configuration choice providing a low value on the first and secondinternal nodes net0 and net2 minimizes the average leakage power due tothe variable component.

In fact if these nodes are pulled down, the difference between internalnodes (net0 and net2) and external lines (L0 . . . L3) would be equal toVtl in the best condition, while the difference would be the full logicswing (VDD) in the worst configuration.

Since the probability to have a high or low value on the external linesL0 . . . L3 is equal, on average the pull-down configuration of theswitch block 10 shown in FIG. 3 reduces the leakage dissipation variablecomponent, while the fixed one is nearly the same in both cases.

The traditional scheme of the switch block 10 as shown in FIG. 3 can bemodified in order to save leakage current while keeping good timingperformance, such modification being based on the consideration thatsignal delay is mainly due to the transition time of the two inverterswhen the input signal changes.

A modified switch block 10 (also indicated as Switch0−Vth pass-trans)can be thus obtained by using Vth transistors also for thepass-transistors N0, N1, N2 and N6, while Vtl transistors are used forthe inverters.

It is also possible to modify the switch block 10 in order to minimizethe leakage current by using all Vth transistors (also indicated asSwitch0−all Vth trans). It is clear that this solution certainly reducesthe leakage power consumption drastically, but at the cost ofintroducing many slow transistors on the signal path delay.

So, other solutions need to be found in order to apply reconfigurablecomputing to low-power portable environments.

BRIEF SUMMARY OF THE INVENTION

The disclosed embodiments of the present invention are directed to aswitch block for FPGA architectures having structural and functionalcharacteristics, which provide reduced static consumption of thearchitecture as a whole without affecting the operational speed thereof,and in this way overcoming the limits that still affect the devicesrealized according to the known designs.

The switch block connects a first, second, third and fourth lines andincludes:

a first pass-transistor connected between the first line and a firstinternal node;

a second pass-transistor connected between the second line and the firstinternal node;

a third pass-transistor connected between the third line and the firstinternal node;

a fourth pass-transistor connected between the fourth line and a secondinternal node;

a first and a second inverters, inserted between the first and thesecond internal node, interconnected at a third internal node;

the first inverter including a PMOS transistor and an NMOS transistorconnected, in series to each other, between the first voltage referenceand a fourth internal node, the transistors of the first inverter havingtheir gate terminals connected to each other and to the first internalnode and common drain terminals connected to the third internal node;

the second inverter including a PMOS transistor and an NMOS transistorconnected, in series to each other, between the first voltage referenceand the fourth internal node, the transistors of the second inverterhaving their gate terminals connected to each other and to the thirdinternal node and common drain terminals connected to the secondinternal node

wherein the fourth internal node is connected to a second voltagereference by means of a pull-down block.

A further embodiment is directed to a switch block connecting a first,second, third and fourth lines and comprising:

a first pass-transistor connected between the first line and a firstinternal node;

a second pass-transistor connected between the second line and the firstinternal node;

a third pass-transistor connected between the third line and the firstinternal node;

a fourth pass-transistor connected to the fourth line;

a first and a second inverters, inserted between the first internal nodeand the fourth line, interconnected at a second internal node;

the first inverter comprising a PMOS transistor and an NMOS transistorconnected, in series to each other, between the first and second voltagereferences, the transistors of the first inverter having their gateterminals connected to each other and to the first internal node andcommon drain terminals connected to the second internal node;

the second inverter including a PMOS transistor and an NMOS transistorconnected, in series to each other, between the first and second voltagereferences, the transistors of the second inverter having their gateterminals connected to each other and to the second internal node; and

wherein the NMOS transistor of the second inverter is directly connectedto the fourth line and the PMOS transistor of the second inverter isconnected to the fourth pass-transistor.

A still further embodiment of the invention relates to a switch blockconnecting a first, second, third and fourth lines and comprising:

a first pass-transistor connected between the first line and a firstinternal node;

a second pass-transistor connected between the second line and the firstinternal node;

a third pass-transistor connected between the third line and the firstinternal node;

a fourth pass-transistor connected to the fourth line;

a first and a second inverters, inserted between the first internal nodeand the fourth line, interconnected at a second internal node;

the first inverter having a PMOS transistor and an NMOS transistorconnected, in series to each other, between the first voltage referenceand a third internal node, the transistors of the first inverter havingtheir gate terminals connected to each other and to the first internalnode and common drain terminals connected to the second internal node;

the second inverter including a PMOS transistor and an NMOS transistorconnected, in series to each other, between the first voltage referenceand the third internal node, the transistors of the second inverterhaving their gate terminals connected to each other and to the secondinternal node

wherein the NMOS transistor of the second inverter is directly connectedto the fourth line and the PMOS transistor of the second inverter isconnected to the fourth pass-transistor; and

wherein the third internal node is connected to a second voltagereference by means of a pull-down block.

Another embodiment of the invention is directed to a switch blockconnecting a first, second, third and fourth lines and furtherincluding:

a first pass-transistor connected between the first line and a firstinternal node;

a second pass-transistor connected between the second line and the firstinternal node;

a third pass-transistor connected between the third line and the firstinternal node;

a fourth pass-transistor connected to the fourth line;

a first and a second inverters, inserted between the first internal nodeand the fourth line, interconnected at a second internal node;

the first inverter having a PMOS transistor and an NMOS transistorconnected, in series to each other, between the first voltage referenceand a third internal node, the transistors of the first inverter havingtheir gate terminals connected to each other and to the first internalnode and common drain terminals connected to the second internal node;

the second inverter including a PMOS transistor and an NMOS transistorconnected, in series to each other, between the first voltage referenceand the third internal node, the transistors of the second inverterhaving their gate terminals connected to each other and to the thirdinternal node;

wherein the NMOS transistor of the second inverter is directly connectedto the fourth line and the PMOS transistor of the second inverter isconnected to the fourth pass-transistor;

wherein the third internal node is connected to a second voltagereference by means of a pull-down block; and

wherein the switch block further includes a driving block connected tothe gate terminals of the pass-transistors as well as to the pull-downblock.

Still another embodiment of the invention relates to a switch blockconnecting first, second, third and fourth lines and having:

a first pass-transistor connected between the first line and a firstinternal node;

a second pass-transistor connected between the second line and the firstinternal node;

a third pass-transistor connected between the third line and the firstinternal node;

a fourth pass-transistor connected to the fourth line;

a first and a second inverters, inserted between the first internal nodeand the fourth line, interconnected at a second internal node;

the first inverter including a PMOS transistor and an NMOS transistorconnected, in series to each other, between the first and second voltagereferences, the transistors of the first inverter having their gateterminals connected to each other and to the first internal node andcommon drain terminals connected to the second internal node;

the second inverter having a PMOS transistor and an NMOS transistorconnected, in series to each other, between the first and second voltagereferences, the transistors of the second inverter having their gateterminals connected to each other and to the second internal node;

wherein the NMOS transistor of the second inverter is directly connectedto the fourth line and the PMOS transistor of the second inverter isconnected to the fourth pass-transistor; and

wherein the switch block further comprises a driving block connected tothe gate terminals of the pass-transistors and a body biasing blockconnected to the body terminal of the NMOS transistor of the secondinverter.

Another embodiment of the invention is directed to a switch blockconnecting a first, second, third and fourth lines and including:

a first pass-transistor connected between the first line and an inputinternal node;

a second pass-transistor connected between the second line and the inputinternal node;

a third pass-transistor connected between the third line and the inputinternal node;

a fourth pass-transistor connected to the fourth line;

a first and a second inverters, inserted between a first internal nodeand the fourth line, interconnected at a second internal node;

the first inverter having a PMOS transistor and an NMOS transistorconnected, in series to each other, between the first and second voltagereferences, the transistors of the first inverter having their gateterminals connected to each other and to a first internal node andcommon drain terminals connected to the second internal node;

the second inverter having a PMOS transistor and an NMOS transistorconnected, in series to each other, between the first and second voltagereferences, the transistors of the second inverter having their gateterminals connected to each other and to the second internal node

wherein the NMOS transistor of the second inverter is directly connectedto the fourth line and the PMOS transistor of the second inverter isconnected to the fourth pass-transistor; and

wherein the switch block further comprises an additional inputtransistor inserted between the input and the first internal nodes.

The characteristics and advantages of the switch blocks according to theinvention will be apparent from the following description of embodimentsthereof given by way of indicative and non limiting example withreference to the annexed drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 schematically shows a FPGA architecture realized according to theknown designs;

FIG. 2 schematically shows in an island style a FPGA architecturerealized according to the known designs;

FIG. 3 schematically shows a switch block for FPGA architecturesrealized according to the known designs;

FIG. 4 schematically shows connections realized by a switch block in aswitch matrix of a FPGA architecture;

FIG. 5 schematically shows a switch block for FPGA architecturesrealized according to a first embodiment of the present invention;

FIG. 6 schematically shows a switch block for FPGA architecturesrealized according to a second embodiment of the present invention;

FIG. 7 schematically shows a switch block for FPGA architecturesrealized according to a third embodiment of the present invention;

FIG. 8 schematically shows a switch block for FPGA architecturesrealized according to a fourth embodiment of the present invention;

FIG. 9 schematically shows a switch block for FPGA architecturesrealized according to a fifth embodiment of the present invention;

FIG. 10 schematically shows a high swing SRAM cell to be used with theswitch block of FIG. 9;

FIG. 11 schematically shows a high swing logic to be used with theswitch block of FIG. 9;

FIG. 12 schematically shows a switch block for FPGA architecturesrealized according to a sixth embodiment of the present invention;

FIG. 13 schematically shows an unbuffered configuration of the switchblock of FIG. 12;

FIG. 14 schematically shows experimental results comparing the switchblocks of FIGS. 6, 7, 8 and 9;

FIG. 15 schematically shows experimental results comparing the switchblocks of FIGS. 6 and 12.

DETAILED DESCRIPTION OF THE INVENTION

With reference to such figures, and in particular to FIG. 5, a switchblock realized according to a first embodiment of the invention isschematically shown and globally indicated as 20 or Switch1.

For structurally or functionally equal elements with respect to theswitch block described in the Background section, the same referencenumbers will be applied.

As already described, the switch block 20 (Switch1) realizes theconnection between a first line L0, a second line L1, a third line L2and a fourth line L3 and includes:

a first pass-transistor N0 connected between the first line L0 and afirst internal node net0;

a second pass-transistor N1 connected between the second line L1 and thefirst internal node net0;

a third pass-transistor N2 connected between the third line L2 and thefirst internal node net0; and

a fourth pass-transistor N6 connected between the fourth line L3 and asecond internal node net2.

In the example shown in FIG. 5, the pass-transistors N0-N2 and N6 are ofthe NMOS type.

The switch block 20 (Switch1) also includes a first inverter 21 and asecond inverter 22, inserted between the first net0 and the secondinternal node net2 and interconnected at a third internal node net1.

Advantageously according to this embodiment of the invention, the firstand second inverters, 21 and 22, are connected to a first voltagereference, in particular a supply voltage reference VDD and to a fourthinternal node net3, in turn connected to a second voltage reference, inparticular ground GND, by means of a pull-down block 23.

The first inverter 21 is formed of a PMOS transistor P1 and an NMOStransistor N4 connected, in series to each other, between the supplyvoltage reference VDD and the fourth internal node net3. The transistorsP1 and N4 of the first inverter 21 have their gate terminals connectedto each other and to the first internal node net0 and the common drainterminals connected to the third internal node net1.

In a same manner, the second inverter 22 is formed of a PMOS transistorP2 and an NMOS transistor N5 connected, in series to each other, betweenthe voltage supply reference VDD and the fourth internal node net3. Thetransistors P2 and N5 of the second inverter 22 have their gateterminals connected to each other and to the third internal node net1and the common drain terminals connected to the second internal nodenet2.

Finally, the switch block 20 (Switch1) has a pull down transistor N3inserted between the first internal node net0 and ground GND and a pullup transistor P0 inserted between the supply voltage reference VDD andthe first internal node net0, the pull up transistor P0 having its gateterminal connected to the third internal node net1.

In particular, the pull down transistor N3 is of the NMOS type and thepull up transistor P0 is of the PMOS type, both being high-voltage orVth transistors (as indicated by a thicker gate line in the figure).

In the example shown in FIG. 5, the pull-down block 23 has an additionalpull-down transistor N7 inserted between the fourth internal node net3and ground GND. In particular, the additional pull down transistor N7 isa high-voltage NMOS transistor.

Also, advantageously according to the invention, the pass-transistorsN0-N3 are high-voltage or Vth transistors.

In this way, the switch block 20 (Switch1) shows a reduced leakageconsumption and minimum delay values which respect to the known ones.

In particular, it should be emphasized that the high-voltage additionalpull-down transistor N7, also called footer, is turned off when theswitch block 20 is inactive. In this way, the pull down block 23 allowsto have, in the idle state, all paths between the supply voltagereference VDD and ground GND passing through a turned off high-thresholdtransistor, the footer transistor N7 indeed.

It has been seen that the leakage power of the switch block 20 (Switch1)according to the first embodiment of the invention is thus reduced ofabout two orders of magnitude with respect to the switch block (Switch0)according to the known designs, as shown in FIG. 3, also in case ofhigh-voltage pass-transistors (Switch0−Vth pass-trans). The powerconsumption of the switch block 20 (Switch1) is similar to the one ofthe known switch block (Switch0) when forming all high voltagetransistors (Switch0−all Vth trans).

In this case, however, good timing performance is achieved, since thebuffer stage of the switch block 20 (Switch1), substantially includingthe first and second inventers 21 and 22, is mainly implemented withfast low-voltage transistors.

In particular it should be remarked that the footer transistor N7 isalways on when the buffer stage is active and that it does not switchwith the input signals.

The introduction of the footer transistor N7 reduces the driving factorof the pull down path of the buffer stage of the switch block 20(Switch1). In fact, compared with the known schemes, the pull down pathof the switch block 20 (Switch1) according to the first embodiment ofthe invention has a series of three transistors (N5, N6 and N7) insteadof two as for the known solution as shown in FIG. 3 (Switch0).

Also, advantageously according to the invention, a second embodiment ofthe switch block 20 is provided, showing an enhanced driving factor withrespect to the Switch1 scheme.

This second embodiment is shown in FIG. 6, globally indicated as 20 orSwitch2. It will be clear from the following description that the switchblock 20 (Switch2) scheme has been designed in order to reduce thepropagation delay of the switch block 20 (Switch0) scheme.

The switch block 20 (Switch2) shows a similar structure with respect tothe known switch block (Switch0), the detailed description thereof beingso omitted for sake of simplicity, only the differences beinghighlighted.

In particular, the NMOS transistor N5 of the second inverter 22 isdirectly connected to the fourth line L3, such that the pull down pathof the buffer final stage according to such Switch2 scheme comprisesonly the transistor N5 itself.

Moreover, the pull down transistor N3 is substituted by a furtherpull-up transistor P3 inserted between the voltage supply reference VDDand the first internal node net0, the further pull-up transistor P3being a high-voltage PMOS transistor.

According to a third embodiment of the invention, the switch block 20also comprises a pull-down block 23 as described for the Switch1 scheme.This third embodiment has been indicated as Switch3 and schematicallyshown in FIG. 7.

In this case, the PMOS transistor P1 of the first inverter 21 has to bechanged from a low-voltage to a high-voltage transistor, in order toavoid a large leakage power consumption through a path composed only oflow-threshold transistors, in particular N5, N4 and P1.

Also in this case, the pull down transistor N3 is substituted by afurther pull-up transistor P3 inserted between the voltage supplyreference VDD and the first internal node net0, the further pull-uptransistor P3 being a high-voltage PMOS transistor. In this way, thePMOS transistor P1 of the first inverter 21 is correctly turned offduring the idle state of the switch block 20 (Switch3).

The increase of the variable contribution of leakage current through theinput pass-transistors N0-N2 with respect to the condition of net0pulled down is negligible because N0, N1 and N2 are small sizedlow-voltage transistors.

Also, it should be emphasized that the choice to have the PMOStransistor P1 instead of the NMOS transistor N4 of the first inverter 21as a high-voltage transistor optimizes signal propagation delay,balancing rising and falling signal edges.

Comparing the first and third embodiments (Switch1 and Switch3) of theswitch block 20 of the invention, it can be noticed that the mainleakage current passes through the footer transistor N7. However thevalue of this current is quite different in the two embodiments becauseof the different voltages at the terminals of such footer transistor N7.

In particular, according to the first embodiment Switch1, during theidle state, the fourth internal node net3 asymptotically reaches thevoltage supply value VDD, while according to the third embodimentSwitch3 the same internal node net3 only reaches an lower value equal toVDD−Vth, thus obtaining a further reduced leakage current.

The switch blocks according to the Switch0(all Vth trans), Switch1 andSwitch3 schemes have a consumption which is two orders of magnitudelower than the switch blocks according to the Switch0 and Switch0(Vthpass-trans) schemes, showing that the introduction of high-voltagetransistors in the buffer stage of the switch block achieves asignificant reduction of the leakage.

In particular the switch block Switch3 shows the lowest consumption,even lower than the known switch block Switch0 comprising only highthreshold transistors. This is mainly due to the reduced voltage on thefooter transistor N7.

Advantageously with the third embodiment of the invention, the switchblock contribution to the leakage consumption of a FPGA architecturetile becomes negligible with respect to the other blocks. The samecircuital scheme can also be applied for the output connect blocks,which cause most of the connect blocks dissipation.

The penalty to be paid for a low-leakage design is about 25% on theinterconnect delay under same driving width conditions. Widertransistors could however be used in order to reduce this gap, all themore that the leakage advantage would remain substantially unchanged.

The switch block 20 (Switch3) also achieves the best performance, sinceit reduces the active leakage while keeping steep signal edges.

From an area occupation point of view, the introduction of theadditional pull-down block 23, and in particular of the footertransistor N7 in the switch blocks according to the Switch1 and Switch3schemes, increases the switch area of 37%, if considering alsoconfiguration memories. However since buffered switches are usuallymixed with pass-transistors switches, the area increase of a FPGAarchitecture tile—where the switch block occupies 65% of the totalarea—is about 17%.

A fourth embodiment of the switch block 20 according to the presentinvention is schematically shown in FIG. 8 and globally indicated asSwitch4.

The switch block 20 according to the Switch4 scheme combines supercut-off, body biasing and multi-threshold techniques to reduce theleakage current of programmable interconnections, which give by far themain contribution to static power dissipation.

In particular, the switch block 20 (Switch4) has the same structure ofthe switch block 20 (Switch3) and additionally comprises a driving block24 which is suitably connected to the gate terminals of thepass-transistors N0-N3 and N6 as well as of the footer transistor N7.

In particular, the driving block 24 applies to such gate terminals anegative voltage value between a negative voltage value −Vt and thesupply voltage value VDD.

Since sub-threshold current of NMOS transistors exponentially depends onthe gate-source voltage VGS, applying a reverse gate bias reduces abouttwo orders of magnitude leakage consumption.

In particular, it should be noted that leakage current associated to thefourth embodiment of the invention, the switch block 20 (Switch4) shownin FIG. 8, is composed of a fixed contribution due to the intrinsicsubthreshold current of the inverters 2 and 22, and of a variablecontribution. The last one is due to the leakage current passing throughthe pass-transistors N0-N2 and N6, and depends on the difference ofvoltage levels between source and drain terminals of suchpass-transistors.

The main advantage of this approach applied to pass transistors is thattheir leakage current can be reduced by three orders of magnitude withno penalty in area or delay with respect to the reference circuit usinghigh-speed pass transistors. Notice that when all lines have logic “1”,corresponding to the value VDD−Vtl, the drain-source voltage VDS of allpass-transistors (in the off state) is only Vtl, and the diode reversecurrent dominates the drain-source current IDS. For this reason in thiscase both implementations show the same power consumption.

It should be also noted that, in order to reduce the buffer intrinsicleakage power, a reverse gate bias cannot be applied to the NMOStransistor N5 of the second inverter 22, since its PMOS transistor P2would have a body-gate voltage VBG higher than the recommended valueequal to the supply voltage value VDD. This could break down thetransistor gate oxide causing severe reliability problems.

For this reason a gate biased footer transistor N7 is added. The footertransistor N7 is controlled by a same signal applied to the fourthpass-transistor N6. Delay will increase due to the transistor seriesintroduced, but much less than in the case of a fully dual-Vth approach,if the same area is kept.

Even in this super cut-off embodiment, some transistors have lowthreshold, and in particular the PMOS transistor P1 of the firstinverter 21 is used to avoid leakage consumption through its NMOStransistor N4 and the NMOS transistor N5 of the second inverter 22,which leakage arises because of the direct connection to the fourth lineL3.

Furthermore, according to a fifth embodiment of the invention, a bodybiasing is used instead to reduce the buffer intrinsic leakage in orderto achieve a better power-delay tradeoff. The corresponding switch block20 is shown in FIG. 9, also indicated as Switch5.

In particular, the switch block 20 according to the Switch5 scheme hasthe same structure of the switch block 20 according to the Switch2scheme and further comprises a body biasing block 25 connected to thebody terminal of the NMOS transistor N5 of the second inverter 22 inorder to exploit the dependence of threshold voltage on the body-sourcevoltage VBS modeled by the body effect.

In particular, the body biasing block 25 comprises a first N8 and asecond biasing transistor N9, having their gate terminals connected tothe driving block (not shown in the figure for sake of simplicity). Thedriving block is also connected to the gate terminals of thepass-transistors N0-N2 and N6.

The first biasing transistor N8 is connected between a body terminal ofthe NMOS transistor N5 of the second inverter 22 and a negative voltagereference −Vt and has its body terminal connected to the negativevoltage reference −Vt and to the body terminal of the second biastransistor N9, being in turn connected between a body terminal of theNMOS transistor N5 of the second inverter 22 and ground GND.

In this way, the body biasing block 25 apply a negative voltage value−Vtl to a body or bulk terminal of an NMOS transistor in the off stateand reduces the subthreshold current by one order of magnitude. Thistechnique is better suited than gate biasing to the inverters 21 and 22,since it can be adopted in a single transistor, without affecting theothers.

It should be noted that an isolated well is provided for each MOStransistor having a different bulk voltage. Since layout rules fortriple well implementation impose an area overhead, body-biasing cannotbe applied to each single pass-transistor, because of the large areaoccupation. However a biased pwell can be used only for the wide NMOS ofthe second or final inverter 22, which is the most power consuming andtiming critical at the same time, once gate biasing is applied topass-transistors, as shown in FIG. 9 for the Switch5 scheme. With suchmixed approach, that can be indicated as a MTSCBB (Multi-Threshold-SuperCut-off-Body Biasing) approach, no footer transistor has to be inserted.

The switch block 20 (Switch5) thus comprises only minimum sized Vth biastransistors N8 and N9 which are alternatively turned on. In particular,when the switch block 20 (Switch5) is on, the second bias transistor N9is active and the second or final inverter 22 behaves exactly as in thehigh-speed scheme (Switch2).

Otherwise, the first bias transistor N8 is turned on, biasing the bulkterminal of the NMOS transistor N5 of the second or final inverter 22 toa negative voltage, thus reducing leakage.

Since both the first and second bias transistors, N8 and N9, have avalue −Vtl applied to their source terminals, their bulk terminals alsoneed to be connected to the same voltage. As a consequence the voltageapplied to their gate terminals should range between −Vtl and VDD−Vtl,in order to avoid a gate-bulk voltage VGB higher than the power supplyvoltage value VDD which could result in reliability problems on the gateoxide.

With respect to the high-speed implementation (Switch2), the PMOStransistor P1 of the first inverter 21 is turned to a high threshold onein order to avoid a high leakage current through the first inverter 21itself. This adds some delay to the critical path, however it is not socritical since the first inverter 21 only drives a local line.

It should be noted that the exploitation of super cut-off and bodybiasing techniques requires that the switch blocks 20 realized accordingthe proposed Switch4 and Switch5 schemes are supplied with controlsignals having a swing out of standard 0-VDD.

In particular, according to the invention, the driving block 24 shouldbe a high swing signal circuit. However switch control signal aregenerated by SRAM cells which are rarely configured, giving a negligiblecontribution to dynamic power dissipation. On the other hand, staticconfiguration memories are not on the critical path, thus they can beimplemented with high-voltage transistors which cut down leakagecurrent.

Moreover, voltages higher than the power supply voltage VDD have beenextensively used for pass-transistor gate boosting. However, astechnology scales, gate oxide thickness is so small that reliability hasbecome an issue when a voltage out of the standard range need toapplied.

Furthermore in the case of the combined low-leakage technique proposed,different signals controlling the switch block require different swings.

In order to comply to the above requirement, the driving block 24 isrealized by using a suitable design of a small SRAM cell, which is alsofree of reliability problems, as shown in FIG. 10 also indicated as 24.

The SRAM cell 24 is connected between a first and a second voltagereferences, in particular, the supply voltage reference VDD and thenegative voltage reference −Vt.

In particular, the SRAM cell 24 comprises:

a first or high block 24A inserted between the supply voltage referenceVDD and a first output terminal Drive; and

a second or low block 24B, in turn inserted between the first outputterminal Drive and the negative voltage reference −Vt.

The high and low blocks 24A and 24B are also connected to each other andto an input terminal IN, which is in turn connected to a writetransistor MW.

The high block 24A comprises a first M1 and a second high-voltage PMOStransistors M2 as well as a first M3 and a second low-voltage NMOStransistors M4. In particular, the first PMOS transistor M1 and thefirst NMOS transistor M3 are inserted, in series to each other, betweenthe supply voltage reference VDD and the input terminal IN and havetheir body or bulk terminals connected to the supply voltage referenceVDD. The first PMOS transistor M1 has a gate terminal connected to asecond output terminal DriveH.

In a similar manner, the second PMOS transistor M2 and the second NMOStransistor M4 are inserted, in series to each other, between the supplyvoltage reference VDD and the first output terminal Drive and have theirbody or bulk terminals connected to the supply voltage reference VDD.The second PMOS transistor M2 has a gate terminal connected to a commondrain terminals of the first PMOS transistor M1 and of the first NMOStransistor M3.

The first M3 and second NMOS transistors M4 have their gate terminalsconnected to each other and to the ground GND.

The low block 24A comprises a third M5 and a fourth high-voltage NMOStransistors M6 as well as a fifth M7 and a sixth low-voltage NMOStransistors M8. In particular, the third and fifth NMOS transistors, M5and M7, are inserted, in series to each other, between the inputterminal IN and the negative voltage reference

−Vt and have their body or bulk terminals connected to the negativevoltage reference

−Vt. The third NMOS transistor M5 has a gate terminal connected to athird output terminal DriveL.

In a similar manner, the fourth and sixth NMOS transistors, M6 and M8,are inserted, in series to each other, between the first output terminalDrive and the negative voltage reference −Vt and have their body or bulkterminals connected to the negative voltage reference −Vt. The fourthNMOS transistor M6 has a gate terminal connected to a fourth outputterminal DriveL*.

The fifth and sixth NMOS transistors, M7 and M8, have their gateterminals connected to each other and receiving a voltage value equal toVDD−Vt.

It should be noted that a standard four transistor bistable circuitcannot be used in this case where output terminal assumes −Vt as lowlogic level. In fact, if this negative voltage signal is directlyconnected to a gate terminal of a PMOS transistor, as in standardbistable circuit, the body-gate voltage VBG would be higher than thepower supply voltage VDD, causing the break down of its gate oxide. Thesame considerations apply to NMOS transistors having the bulk terminalconnected to −Vt.

For this reason, the SRAM cell 24 comprises four low-threshold MOStransistors, namely M3, M4, M7 and M8 resulting in a stack oftransistors which generates the same logic value with three differentswing values. In this way, only low-swing signals are connected to thegate terminals of the transistors.

It should be noted that the signals provided by the SRAM cell 24 aresuitable to drive all programmable transistors in the switch block 20according to the Switch4 and also to the Switch5 scheme.

In particular, for a switch block 20 according to the Switch5 scheme,the first output terminal Drive drives the pass-transistor N6 connectedto the fourth line L3, the third output terminal DriveL is connected tothe first N8 and second bias transistor N9 and the second outputterminal DriveH controls the second pull-up transistor P3.

It should be remarked that the bias transistors N8 and N9 are onlypartially on with a voltage value equal to VDD-2Vt applied to their gateterminals. However since they are pull-down transistors, this is not aproblem. The same consideration apply for the pull-up transistor P3.

Since some decoding logic is often used between SRAM cells andprogrammable transistors, high swing logic capable of generating all thedifferent swing signals is needed, as shown in FIG. 11, globallyindicated at 26.

The swing logic 26 implements a NAND gate and is connected between thesupply voltage reference VDD and the negative voltage reference −Vt.

In particular, the swing logic 26 comprises a first M9 and a secondhigh-voltage PMOS swing transistors M10 inserted, in parallel to eachother, between the supply voltage reference VDD and a first node X1. Thefirst PMOS swing transistor M9 has a gate terminal connected to a firstline A and the second PMOS swing transistor M10 has gate terminalconnected to a second line B.

The swing logic 26 also comprises a first M11 and a second high-voltageNMOS swing transistors M12, inserted, in series to each other, between asecond node X2 and the negative voltage reference −Vt. The first NMOSswing transistor M11 has a gate terminal connected to the first line Aand the second NMOS swing transistor M12 has gate terminal connected tothe second line B.

Finally, the swing logic 26 comprises a first and a second low-voltageNMOS swing transistors, M13 and M14, inserted, in series to each other,between the first and second nodes, X1 and X2. The first low-voltageNMOS swing transistor M13 has a gate terminal connected to ground GND,while the second low-voltage NMOS swing transistor M13 has a gateterminal receiving a voltage value equal to VDD−Vt.

The first and second PMOS swing transistors, M9 and M10, as well as thefirst low-voltage NMOS swing transistor M13 have their bulk terminalsconnected to the supply voltage reference VDD.

Furthermore, the first and second NMOS swing transistors, M11 and M12,as well as the second low-voltage NMOS swing transistor M14 have theirbulk terminals connected to the negative voltage reference −Vt.

In summary, similarly to the SRAM cell 24, two low-voltage transistors,namely M13 and M14, in series to each other, are introduced to avoidlarge gate-bulk voltages. The lines A and B carrying the same signalwith different swings need to be fed for each gate terminal. Bothsignals are directly generated by a preceding high swing stage thatcould be either the SRAM cell 24 shown in FIG. 10 or another logic gate.

Both the proposed SRAM cell 24 and swing logic 26 are not critical fordelays, therefore they are implemented with a mixture of high and lowthreshold transistors, such that leakage consumption is minimal.

Concerning leakage the proposed techniques—Dual-Vt (Switch3), Supercut-off (Switch4) and MTSCBB (Switch5)—are all effective in reducing itby at least one order of magnitude. Super cut-off (Switch3) achieves thebest performance such that the SRAM cells give the main contribution topower. This result suggests that it is not useful to further reduce theswitch buffer leakage consumption.

The combined MTSCBB technique (Switch5) on the other hand achieves 6×the dissipation of the super cut-off one (Switch4). This is due to thefact that transistor threshold depends on the square root of bulkvoltage through the body effect parameter. Since leakage current is anexponential function of both VGS and Vt, in order to achieve the samereduction a stronger bias needs to be applied to bulk than to gate.

Furthermore the super cut-off buffer leakage is particularly small alsobecause of the transistor stack effect caused by the introduction of thefooter transistor N7, which reduces its drain-source voltage VDS.Anyway, since bias voltage depends on the negative supply voltagechosen, this can be tuned in order to achieve even lower leakageconsumption in both super cut-off (Switch4) and MTSCBB techniques(Switch5).

From an area occupation point of view, both the Dual-Vt (Switch3) andthe super cut-off techniques (Switch4 and Switch5) require additionalarea for the wide footer transistor. On the other hand MTSCBB and gatebiasing have an overhead due to the use of eight-transistor SRAM cellswhich also have bulk terminals of their NMOS transistors connected to anegative voltage. In this case, layout rules require for example to havea minimum distance separating differently biased wells.

As a consequence the super cut-off scheme (Switch4) has the largestswitch buffer area, while MTSCBB scheme (Switch5) is penalized theleast, with only 15% increase.

As expected delay increases when adopting low-leakage design techniques.While the dual-Vt scheme (Switch3) has 36% penalty with respect to ahigh speed implementation, MTSCBB scheme (Switch5) has only 5% increase.

As expected leakage consumption greatly increases with respect to 130nm, demonstrating the need for sharp solutions to tackle the rapidlygrowing problem of static power dissipation. Table V also shows that theproposed approach maintains the same effectiveness in reducing leakagepower also in 90 nm technology.

To better show the tradeoffs of the proposed schemes, FIG. 14 depictsarea vs leakage graph where it clearly appears that the MTSCBB scheme(Switch5) outperforms the other schemes.

A few considerations on the impact of the proposed approaches over anentire tile can be made. Cutting down the switch block leakageconsumption, its contribution to the tile becomes much smaller than theother blocks. Since exactly the same technique can also be applied forconnect blocks, a 4× leakage power reduction can be achieved for theentire tile.

The impact of the area overhead penalty also needs to be evaluated overan entire tile in the case the MTSCBB scheme (Switch5) is adopted forall programmable interconnections comprising connect blocks. If weassume that routing resources occupy 60% of the area, the penalty isonly 9%.

On the timing performance point of view, since the critical path of amapped circuit also comprises logic block delays, assuming that 65% ofthe total delay is due to programmable interconnections, the overalldelay penalty becomes only 3%.

A sixth embodiment of the switch block according to the invention isshown in FIG. 12 and globally indicated at 20 or Switch6. Thisembodiment copes with the tradeoff between signal propagation delay andleakage power dissipation.

As will be clear from the following description, the switch block 20(Switch6) has been redesigned through hardware solutions aimed at thereduction of leakage power and the development of an external softwareprogrammability leading to a run-time minimization of subthresholdcurrent.

In particular, the switch block 20 (Switch6) has a same structure as aswitch block according to the Switch2 scheme above described.

With respect to the Switch2 scheme, the PMOS transistor P1 of the firstinverter 21 and the NMOS transistor N5 of the second inverter 22 havebeen turned from low or standard voltage transistors to high-voltageones, the NMOS transistor N5 keeping the same size.

This modification achieves the advantage of reducing leakage injectionon internal nodes net0 and net1 as well as balancing the rising andfalling output edge. In fact the presence of the fourth pass-transistorN6 connected to the fourth line L3, which is the tristate buffer outputterminal, reduces the signal swing by one threshold voltage, affectingthe rising transition delay of following switches.

Since the rising transition is the critical one, only transistorsinvolved in the output falling transition have been turned intohigh-voltage transistors, thus with the effect of balancing the twoedges as well.

Furthermore, when the switch block 20 is in stand-by, the fourthpass-transistor N6 is off while the second pull-up transistor P3 is on,such that the PMOS transistor P2 of the first inverter 21 and the NMOStransistor N5 of the second inverter 22 are switched off to guaranteethe high-impedance on the output terminal L3.

In this condition every current path passes through a high voltagetransistor in the off state, achieving a considerable reduction instand-by leakage consumption. However the improvement is not limited tothe stand-by mode, since the same condition holds when propagating ahigh logic value through the switch block 20 (Switch6). As a consequenceactive leakage results cut down half the times, resulting in an averagereduction of almost 50%.

Moreover, an additional input transistor N10 has been inserted betweenan input internal node net0* and the first internal node net0. In thisway, the input pass-transistors N0-N1 are connected to the inputinternal node net0* and the switch block 20 (Switch6) has an input muxcomprising the input pass-transistors N0-N1 and the additional inputtransistor N10.

When this additional input transistor N10 is off, it isolates thepass-transistors N0-N2 from the following buffering stage of the switchblock so that an unbuffered connection can be implemented simply byturning a couple of input pas-transistors on. When the additional inputtransistor N10 is on, the penalty to the buffer propagation delay isnegligible.

The driving signals of each pass-transistor have a range value includedin [−Vt:VDD] according to the super cutoff technique (Switch4), the gateterminals of the input pass-transistors N0-N1 and of the additionalinput transistor N10 being connected to a driving block (not shown inthe figure for sake of simplicity). The driving block provides theneeded voltage value in the range (−Vt:VDD). Since there is anexponential dependence of sub-threshold current on the gate-sourcevoltage VGS, this technique achieves more than order of magnitudeleakage reduction. The extended voltage swing of values of the drivingsignals for each pass-transistor does not induce any further delay sinceit regards only the case when the pass-transistor is off.

The introduction of the additional input transistor N10 allows theadoption of a driving techniques in order to reduce active leakageconsumption, as will be explained in the following description.

When the additional input transistor N10 is on, the buffering stage isused to propagate a signal from an input line L0-L2 to the output lineL4.

However, also in the case the additional input transistor N10 is off,the switch block 20 can be exploited to propagate a signal between twolines by turning on the desired pass-transistors composing the inputmux.

An unbuffered path (connecting the first line L0 to the third line L2)is shown in FIG. 12 with a dashed line which passes through a series oftwo NMOS transistors. When considering a full switch connecting fourwires, two of the four buffers can be exploited together to connect thesame wires. In FIG. 13, a double path connecting L0 and L2 lines ishighlighted, and the resulting circuit is depicted.

In should be emphasized that the four NMOS pass-transistors consideredare the parallel of a series of two transistors, with an equivalentchannel width equal to the channel width of a single NMOS passtransistor.

When the switch block 20 (Switch6) is configured to operate inunbuffered mode, the corresponding buffer can be completely switched offby turning off the output pass-transistor N5 and the additional inputtransistor N10 and turning on the second pull-up transistor P0. As aresult, the buffering part of the switch block 20 (Switch6) has the sameleakage current obtained in standby condition, even though the switchblock is effectively used. In this case the active leakage can bereduced by one order of magnitude.

The possibility of exploiting the switch block 20 (Switch6) in theunbuffered operating mode is strictly related to the performancedegradation deriving from the propagation of signals through a passseries instead of buffers. In order to evaluate such a delay increase,an analysis has been carried out on a set of MCNC benchmark using VPR asdescribed by Bets et al. in “Architecture and CAD for Deep-SubmicronFPGAs”, Kluwer Academic Publishers, 1999.

A routing architecture with only unbuffered switches (modeled by cMOSpass-transistors) achieves the minimum active leakage power, since thebuffering stage is completely avoided. However in this configuration theaverage critical path increases of about 20% on 80% of the studiedbenchmark and of 64% on the largest algorithms.

Since the routing architecture according to the switch6 scheme is basedon nMOS pass transistors instead of cMOS ones, the degradation of asignal crossing a series of more than four switches makes this solutionunacceptable both in terms of signal delay and of dynamic powerdissipation.

Therefore, when using a switch block according to the Switch6 scheme,the substitution of buffered switches with unbuffered ones is made onlyin the case the critical path is not increased.

In this regard, it should be noted that, in order to avoid excessivesignal degradation, only series of at most two pass transistors areallowed.

Advantageously according to this sixth embodiment of the invention, aconfiguration method has been also developed to substitute the bufferedswitches with unbuffered ones in a circuit mapped on a FPGAarchitecture. The method comprises the following steps:

1) Timing analysis of the graph of nodes representing routing and logicresources of the FPGA architecture used by the mapped circuit. The slackobtained for each net represents the delay which can be added withoutmodifying the critical path.

2) Substitution of a buffered switch with an unbuffered one startingfrom the input nodes of the analyzed circuit.

3) Verification that the critical path delay has not been modifiedthrough timing analysis.

4) If the substitution is done, all slacks are recalculated, returningto step 2.

The substitution of a buffered switch with an unbuffered one increasesthe delay of the related path. However, if the net is multi-fanout, itsload capacitance also increases, introducing an additional delay.Therefore step 3 is necessary to correctly take in consideration thiscase.

As result, the proposed configuration method could substitute about 39%of buffered switches with unbuffered ones, obtaining a correspondingreduction of active leakage power dissipation without performancedegradation.

The combination of the hardware techniques described (dual-threshold andsuper cut-off techniques) allows to reduce the standby leakage powermore than one order of magnitude.

It should be noted that the induced super cut-off condition reduces thesubthreshold current associated to each NMOS transistor of about twoorder of magnitude compared with a typical turn off state.

Active power dissipation is reduced from 15% to more than one order ofmagnitude, depending on the switch configuration and signal logic valuesat the boundary.

FIG. 15 shows the average active leakage power dissipation comparingswitch blocks according to the Switch2 and Switch6 schemes, the last inbuffered and unbuffered mode. The analysis has been carried out for thefour possible configurations of the switch block 20 as shown in FIG. 4(A,B,C,D), and the average of active leakage power has been calculatedconsidering each combination of signal values at the switch pins. Theaverage result is a global reduction of around 44%.

Finally, when also applying the software approach proposed, the activesubthreshold current of each switch buffer is reduced of almost twoorder of magnitude: this result can be observed in the third columns ofthe histogram of FIG. 16.

However, as explained before, the change from a buffered switch to anunbuffered switch without performance degradation is possible only foralmost 39% of the total switch buffers. As a result, we obtain a globalreduction of active leakage current of about 82%.

The signal propagation between two consecutive switch block according tothe Switch2 scheme has a small performance degradation (less than 8%)with respect to the Switch6 scheme. This is due to the utilization ofhigh-voltage transistors (namely P1 and N5) instead of standard orlow-voltage ones on the signal falling path.

The area occupation of the different switch implementations has beencompared in terms of number of minimum sized transistors. The areaoccupied by the switch block according to the Switch6 scheme increasesby 36% with respect to the one according to the Switch2 scheme. Thisdifference is due to:

the size of each input pass-transistor, which is double compared to thecorresponding MOS of the switch block according to the Switch2 scheme(20%);

the different implementation of SRAM memory cell which is necessary toincrease the voltage swing of the pass-transistors driving signals(15%);

the resizing of the PMOS transistor P1 of the first inverter 21, whichis necessary in order to balance the signal rising and falling path(1%);

However, when hypothesizing that the percentage of the total areaoccupied by the switch block is about 60% and considering that it iscomposed of a mixture of buffers and pass transistors, the FPGAarchitecture total area increase results less than 17%.

In summary, the embodiments of a switch block for FPGA architecturesaccording to the invention combine hardware and software techniques andthus reduce both active and standby leakage power.

In particular, exploiting a dual-VT scheme the switch block is modifiedmixing high and low threshold transistor in order to reduce the leakagecurrent, as in the Switch1, Switch2 and Switch3 schemes. The proposedswitch blocks provide the best trade-off between power consumption andpropagation delay.

Furthermore, the combined approach of the Low-leakage and Super cut-offtechniques, according to the Switch4 scheme, reduces leakage powerconsumption of programmable interconnects by at least one order ofmagnitude. Moreover the MTSCBB (Multi-Threshold-Super Cut-off-BodyBiasing) technique used in the Switch5 scheme exploits the advantages ofall previous technique obtaining a switch delay penalty of only 5% andan area penalty over an entire tile is only 9%.

Moreover, the Switch6 scheme allows to minimize both the standby leakagecurrent and the active one using a combination of dual-VT and supercut-off techniques. In this way an optimized trade-off between globalleakage power reduction and timing performance is obtained.

Finally, the use of the described configuration method, which isstrictly related to the switch architecture, is useful to minimizeactive subthreshold current.

All of the above U.S. patents, U.S. patent application publications,U.S. patent applications, foreign patents, foreign patent applicationsand non-patent publications referred to in this specification and/orlisted in the Application Data Sheet, are incorporated herein byreference, in their entirety.

From the foregoing it will be appreciated that, although specificembodiments of the invention have been described herein for purposes ofillustration, various modifications may be made without deviating fromthe spirit and scope of the invention. Accordingly, the invention is notlimited except as by the appended claims.

1. A switch block connecting a first, second, third and fourth lines andcomprising: a first pass-transistor connected between the first line anda first internal node; a second pass-transistor connected between thesecond line and the first internal node; a third pass-transistorconnected between the third line and the first internal node; a fourthpass-transistor connected between the fourth line and a second internalnode; a first inverter and a second inverter, inserted between the firstand the second internal node and interconnected at a third internalnode; the first inverter comprising a PMOS transistor and an NMOStransistor connected in series to each other and between the firstvoltage reference and a fourth internal node, the transistors of thefirst inverter having their gate terminals connected to each other andto the first internal node and common drain terminals connected to thethird internal node; the second inverter comprising a PMOS transistorand an NMOS transistor connected in series to each other and between thefirst voltage reference and the fourth internal node, the transistors ofthe second inverter having their gate terminals connected to each otherand to the third internal node and common drain terminals connected tothe second internal node; and wherein the fourth internal node isconnected to a second voltage reference by means of a pull-down block.2. The switch block of claim 1, further comprising: a pull downtransistor inserted between the first internal node and the secondvoltage reference; and a pull up transistor inserted between the firstvoltage reference and the first internal node, the pull up transistorhaving its gate terminal connected to the third internal node; whereinthe pull down and pull up transistors are high-voltage transistors. 3.The switch block of claim 1 wherein the pull-down block comprises anadditional pull-down transistor inserted between the fourth internalnode and the second voltage reference.
 4. The switch block of claim 3wherein the additional pull down transistor is a high-voltagetransistor.
 5. The switch block of claim 1 wherein the pass-transistorsare high-voltage transistors.
 6. A switch block connecting a first,second, third and fourth lines and comprising: a first pass-transistorconnected between the first line and a first internal node; a secondpass-transistor connected between the second line and the first internalnode; a third pass-transistor connected between the third line and thefirst internal node; a fourth pass-transistor connected to the fourthline; first and a second inverters inserted between the first internalnode and the fourth line and interconnected at a second internal node;the first inverter comprising a PMOS transistor and an NMOS transistorconnected in series to each other and between the first and secondvoltage references, the transistors of the first inverter having theirgate terminals connected to each other and to the first internal nodeand common drain terminals connected to the second internal node; thesecond inverter comprising a PMOS transistor and an NMOS transistorconnected in series to each other and between the first and secondvoltage references, the transistors of the second inverter having theirgate terminals connected to each other and to the second internal nodewherein the NMOS transistor of the second inverter is directly connectedto a first conduction terminal of the fourth pass-transistor and to thefourth line and the PMOS transistor of the second inverter is connectedto a second conduction terminal of the fourth pass-transistor.
 7. Theswitch block according to claim 6, further comprising: a pull uptransistor inserted between the first voltage reference and the firstinternal node; and a further pull up transistor inserted between thefirst voltage reference and the first internal node the pull uptransistor having its gate terminal connected to the second internalnode, wherein the pull up transistors are high-voltage transistors.
 8. Aswitch block connecting a first, second, third and fourth lines andcomprising: a first pass-transistor connected between the first line anda first internal node; a second pass-transistor connected between thesecond line and the first internal node; a third pass-transistorconnected between the third line and the first internal node; a fourthpass-transistor connected to the fourth line; a first and a secondinverters, inserted between the first internal node and the fourth line,interconnected at a second internal node; the first inverter comprisinga PMOS transistor and an NMOS transistor connected, in series to eachother, between the first voltage reference and a third internal node,the transistors of the first inverter having their gate terminalsconnected to each other and to the first internal node and common drainterminals connected to the second internal node; the second invertercomprising a PMOS transistor and an NMOS transistor connected, in seriesto each other, between the first voltage reference and the thirdinternal node, the transistors of the second inverter having their gateterminals connected to each other and to the second internal nodewherein the NMOS transistor of the second inverter is directly connectedto the fourth line and the PMOS transistor of the second inverter isconnected to the fourth pass-transistor and wherein the third internalnode is connected to a second voltage reference by means of a pull-downblock.
 9. The switch block according to claim 8, further comprising: apull up transistor inserted between the first voltage reference and thefirst internal node; and a further pull up transistor inserted betweenthe first voltage reference and the first internal node the pull uptransistor having its gate terminal connected to the second internalnode, wherein the pull up transistors are high-voltage transistors. 10.The switch block according to claim 8 wherein the pull-down blockcomprises an additional pull-down transistor, inserted between the thirdinternal node and the second voltage reference.
 11. The switch blockaccording to claim 10 wherein the additional pull down transistor is ahigh-voltage transistor.
 12. The switch block according to claim 8wherein the pass-transistors are high-voltage transistors.
 13. Theswitch block according to claim 8 wherein the PMOS transistor of thefirst inverter is a high-voltage transistor.
 14. A switch blockconnecting a first, second, third and fourth lines and comprising: afirst pass-transistor connected between the first line and a firstinternal node; a second pass-transistor connected between the secondline and the first internal node; a third pass-transistor connectedbetween the third line and the first internal node; a fourthpass-transistor connected to the fourth line; a first and a secondinverters, inserted between the first internal node and the fourth line,interconnected at a second internal node; the first inverter comprisinga PMOS transistor and an NMOS transistor connected, in series to eachother, between the first voltage reference and a third internal node,the transistors of the first inverter having their gate terminalsconnected to each other and to the first internal node and common drainterminals connected to the second internal node; the second invertercomprising a PMOS transistor and an NMOS transistor connected, in seriesto each other, between the first voltage reference and the thirdinternal node, the transistors of the second inverter having their gateterminals connected to each other and to the third internal node whereinthe NMOS transistor of the second inverter is directly connected to thefourth line and the PMOS transistor of the second inverter is connectedto the fourth pass-transistor; wherein the third internal node isconnected to a second voltage reference by means of a pull-down block;and wherein the switch block further comprises a driving block connectedto the gate terminals of the pass-transistors as well as to thepull-down block.
 15. The switch block according to claim 14 wherein thepull-down block comprises an additional pull-down transistor, insertedbetween the third internal node and the second voltage reference andhaving a gate terminal connected to the driving block.
 16. The switchblock according to claim 14 wherein the driving block provides a voltagevalue between a negative value and the value of the first voltagereference.
 17. The switch block according to claim 14, furthercomprising: a pull up transistor inserted between the first voltagereference and the first internal node; and a further pull up transistorinserted between the first voltage reference and the first internal nodethe pull up transistor having its gate terminal connected to the secondinternal node, wherein the pull up transistors are high-voltagetransistors.
 18. The switch block according to claim 14 wherein the PMOStransistor of the first inverter is a high-voltage transistor.
 19. Aswitch block connecting a first, second, third and fourth lines andcomprising: a first pass-transistor connected between the first line anda first internal node; a second pass-transistor connected between thesecond line and the first internal node; a third pass-transistorconnected between the third line and the first internal node; a fourthpass-transistor connected to the fourth line; a first and a secondinverters, inserted between the first internal node and the fourth line,interconnected at a second internal node; the first inverter comprisinga PMOS transistor and an NMOS transistor connected, in series to eachother, between the first and second voltage references, the transistorsof the first inverter having their gate terminals connected to eachother and to the first internal node and common drain terminalsconnected to the second internal node; the second inverter comprising aPMOS transistor and an NMOS transistor connected, in series to eachother, between the first and second voltage references, the transistorsof the second inverter having their gate terminals connected to eachother and to the second internal node wherein the NMOS transistor of thesecond inverter is directly connected to the fourth line and the PMOStransistor of the second inverter is connected to the fourthpass-transistor; wherein the switch block further comprises a drivingblock connected to the gate terminals of the pass-transistors and a bodybiasing block connected to the body terminal of the NMOS transistor ofthe second inverter.
 20. The switch block according to claim 19 whereinthe body biasing block comprises a first and a second biasingtransistors, having their gate terminals connected to the driving block.21. The switch block according to claim 20 wherein the first and secondbiasing transistors are high voltage transistors.
 22. The switch blockaccording to claim 21 wherein the high swing logic is connected betweenthe first voltage reference and the negative voltage reference andcomprises: a first and a second PMOS swing transistors inserted, inparallel to each other, between the first voltage reference and a firstnode, the first PMOS swing transistor having a gate terminal connectedto a first line and the second PMOS swing transistor having a gateterminal connected to a second line; a first and a second NMOS swingtransistors, inserted, in series to each other, between a second nodeand the negative voltage reference, the first NMOS swing transistorhaving a gate terminal connected to the first line and the second NMOSswing transistor having a gate terminal connected to the second line;and a third and a fourth NMOS swing transistors, inserted, in series toeach other, between the first and the second nodes, the third swingtransistor having a gate terminal connected to the second voltagereference, and the fourth NMOS swing transistor having a gate terminalreceiving a voltage value equal to the sum of the first voltagereference and of the negative voltage reference.
 23. The switch blockaccording to claim 22 wherein the first and second PMOS swingtransistors, as well as the third NMOS swing transistor have their bulkterminals connected to the first voltage reference, while the first andsecond NMOS swing transistors, as well as the fourth NMOS swingtransistor have their bulk terminals connected to the negative voltagereference.
 24. The switch block according to claim 22 wherein the firstand second PMOS swing transistors as well as the first M11 and secondNMOS swing transistors are high voltage transistors, while the third andfourth NMOS swing transistors are low-voltage transistors.
 25. Theswitch block according to claim 20 wherein the first and second biasingtransistors are alternatively turned on.
 26. The switch block accordingto claim 25 wherein the second bias transistor is on when the switchblock is on.
 27. The switch block according to claim 25 wherein thefirst bias transistor is on and biases a bulk terminal of the NMOStransistor of the second inverter to a negative voltage.
 28. The switchblock according to claim 19 wherein: the first biasing transistor isconnected between the body terminal of the NMOS transistor of the secondinverter and a negative voltage reference and has its body terminalconnected to the negative voltage reference and to the body terminal ofthe second bias transistor; and the second bias transistor is connectedbetween a body terminal of the NMOS transistor of the second inverterand the second voltage reference.
 29. The switch block according toclaim 19 wherein the PMOS transistor of the first inverter is a highvoltage transistor.
 30. The switch block according to claim 19, furthercomprising: a pull up transistor inserted between the first voltagereference and the first internal node; and a further pull up transistorinserted between the first voltage reference and the first internal nodethe pull up transistor having its gate terminal connected to the secondinternal node, wherein the pull up transistors are high-voltagetransistors.
 31. The switch block according to claim 19 wherein thedriving block is realized by a SRAM cell connected between the first andthe negative voltage reference and comprising: a first block insertedbetween the first voltage reference and a first output terminal; and asecond block, in turn inserted between the first output terminal and thenegative voltage reference; the first and second blocks being alsoconnected to each other and to an input terminal, in turn connected to awrite transistor wherein the first block comprises a first and a secondPMOS transistors as well as a first and a second NMOS transistors andthe second block comprises a third and a fourth NMOS transistors as wellas a fifth and a sixth NMOS transistors.
 32. The switch block accordingto claim 31 wherein the first and second PMOS transistors of the firstblock, as well as the third and fourth NMOS transistors of the secondblock are high-voltage transistors; and the first and second NMOStransistors of the first block as well as the fifth and sixth NMOStransistors of the second block are low-voltage transistors.
 33. Theswitch block according to claim 31 wherein the first PMOS transistor andthe first NMOS transistor of the first block are inserted, in series toeach other, between the first voltage reference and the input terminaland have their bulk terminals connected to the first voltage reference,the first PMOS transistor having a gate terminal connected to a secondoutput terminal; and the second PMOS transistor and the second NMOStransistor of the first block are inserted, in series to each other,between the first voltage reference and the first output terminal andhave their bulk terminals connected to the first voltage reference, thesecond PMOS transistor having a gate terminal connected to a commondrain terminals of the first PMOS transistor and of the first NMOStransistor, the first and second NMOS transistors having their gateterminals connected to each other and to the second voltage reference.34. The switch block according to claim 31 wherein the third and thefifth NMOS transistors of the second block are inserted, in series toeach other, between the input terminal and the negative voltagereference and have their bulk terminals connected to the negativevoltage reference, the third NMOS transistor having a gate terminalconnected to a third output terminal; and the fourth and the sixth NMOStransistors of the second block are inserted, in series to each other,between the first output terminal and the negative voltage reference andhave their body terminals connected to the negative voltage reference,the fourth NMOS transistor having a gate terminal connected to a fourthoutput terminal and the fifth and sixth NMOS transistors having theirgate terminals connected to each other and receiving a voltage valueequal to the sum of the first voltage reference and of the negativevoltage reference.
 35. The switch block according to claim 31 whereinthe SRAM cell is connected to a high swing logic.
 36. A switch blockconnecting a first, second, third and fourth lines and comprising: afirst pass-transistor connected between the first line and an inputinternal node; a second pass-transistor connected between the secondline and the input internal node; a third pass-transistor connectedbetween the third line and the input internal node; a fourthpass-transistor connected to the fourth line; first and a secondinverters inserted between a first internal node and the fourth line andinterconnected at a second internal node; the first inverter comprisinga PMOS transistor and an NMOS transistor connected; in series to eachother and between the first and second voltage references, thetransistors of the first inverter having their gate terminals connectedto each other and to a first internal node and common drain terminalsconnected to the second internal node; the second inverter comprising aPMOS transistor and an NMOS transistor connected, in series to eachother, between the first and second voltage references, the transistorsof the second inverter having their gate terminals connected to eachother and to the second internal node wherein the NMOS transistor of thesecond inverter is directly connected to a first conduction terminal ofthe fourth pass-transistor and to the fourth line and the PMOStransistor of the second inverter is connected to a second conductionterminal of the fourth pass-transistor; and wherein the switch blockfurther comprises an additional input transistor inserted between aninternal input node and the first internal node.
 37. The switch blockaccording to claim 36 wherein the gate terminals of the pass-transistorsand of the additional input transistor are connected to a driving blockproviding a voltage signal having a value between a negative voltagevalue and a value equal to the first voltage reference.
 38. The switchblock according to claim 36 wherein the PMOS transistor of the firstinverter and the NMOS transistor of the second inverter are high-voltagetransistors.
 39. The switch block according to claim 36, furthercomprising: a pull up transistor inserted between the first voltagereference and the first internal node; and a further pull up transistorinserted between the first voltage reference and the first internal nodethe pull up transistor having its gate terminal connected to the secondinternal node, wherein the pull up transistors are high-voltagetransistors.
 40. The switch block according to claim 36 wherein theadditional input transistor is off and the switch block propagates asignal between two lines by turning on at least two of the inputpass-transistors to implement an unbuffered connection.